Apparatus for inspecting defects

ABSTRACT

A defect inspection apparatus includes an illumination optical system, a detection optical system which includes a reflecting objective lens, and wavelength separation optics for conducting wavelength separation, and after the wavelength separation, branching the scattered light into at least a first detection optical path and a second detection optical path. The detection optical system further includes, on the first detection optical path, a first sensor, and on the second detection optical path, a second sensor. A signal processor is provided which, in accordance with at least one of a first signal obtained from the first sensor and a second signal obtained from the second sensor, discriminates defects or defect candidates present on a surface of a sample.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.12/771,216, filed Apr. 30, 2010, now U.S. Pat. No. 8,004,666, which is acontinuation of U.S. application Ser. No. 11/936,115, filed Nov. 7,2007, now U.S. Pat. No. 7,714,997, the contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to an apparatus and method for inspectingdefects, contamination, and other foreign substances present on minutepatterns formed on a substrate through a thin-film process representedby a semiconductor manufacturing process and a flat-panel displaymanufacturing process.

A conventional apparatus for inspecting defects in semiconductors isdisclosed in, for example, International Patent PublicationWO2003/0069263. The conventional inspection apparatus described inWO2003/0069263 illuminates the surface of a wafer obliquely with laserlight, and after the light has been scattered from the wafer surface,captures the scattered light by use of an objective lens disposed abovethe wafer. The scattered light that has been captured is detectedaccording to the particular scattering angle by a plurality ofdetectors. Detection images that have thus been obtained are comparedwith images of adjacent dies in order to detect defects.

Another known apparatus for inspecting defects in semiconductors isdisclosed in, for example, JP-A-2000-105203 (Patent Document 2).According to Patent Document 2, during defect inspection of aninspection object (semiconductor wafer) having an array of LSI chipseach provided with a register group region and memory block regionincluding an iterative pattern formed thereon, and with a CPU core blockregion and input/output block region including a non-iterative patternformed thereon, an optical system for darkfield illumination illuminatesthe wafer with slit-shaped beams of mutually different wavelengthsobliquely from different directions within a horizontal plane, and anoptical system for darkfield detection detects defects present on adielectric film such as an oxide film. It is also described in PatentDocument 2 that the optical system for darkfield detection includes anobjective lens, a spatial filter formed by a recurrence of an iterativelight-shielding pattern, an ND filter, a polarizer, a branching optics(beam splitter) formed to split the beam of light reflected from theinspection object after being passed through the spatial filter, the NDfilter, and the polarizer, and increase the intensity of one of thereflected beams branched by the branching optics, to substantially 1/100of the intensity of the other reflected beam, and a plurality of imagesensors (detectors) each for receiving each reflected beam split by thebeam splitter. In addition, it is described in Patent Document 2 thatthe ND filter, when disposed behind the beam splitter, can conductindependent control of the intensity of each beam of light incident upontwo detectors.

SUMMARY OF THE INVENTION

In the above two citations (Documents 1 and 2), however, sufficientconsideration has not been given to improving a defect detection ratioby, during defect inspection of a mixed-type wafer (such as system LSI)or other electronic components each inclusive of a memory block formedwith a periodic circuit pattern, and of a logic circuit block formedwith an irregular circuit pattern (non-periodic circuit pattern),detecting defects with high sensitivity and detecting a wide variety ofdefect species.

An object of the present invention is to provide a defect inspectionapparatus adapted to solve the above problem and to improve a defectdetection ratio during defect inspection of a mixed-type wafer (such assystem LSI) or the like by detecting defects with high sensitivity anddetecting a wide variety of defect species.

In the present invention, a reflecting objective lens free fromchromatic aberration is employed to suppress changes in brightness dueto multi-wavelength illumination (i.e., illumination with theirradiation light having a plurality of wavelength bands), to provide aclearer view of defects present on a sample, by means of selectivewavelength detection in order to improve sensitivity, and to allow onespatial image on the sample to be acquired as different kinds of opticalimages.

That is to say, one aspect of the present invention is a defectinspection apparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and imaging optics forimaging onto a light-receiving surface of an image sensor the scatteredlight that the reflecting objective lens has converged; and

an image processor which, in accordance with an image signal obtainedfrom the image sensor of the darkfield detection optical system,discriminates defects or defect candidates present on the surface of thesample.

Another aspect of the present invention is a defect inspection apparatusincluding:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and wavelength selectionoptics for selecting a wavelength band for the scattered light that hasbeen converged by the reflecting objective lens, and after thewavelength band selection, branching the scattered light into at least afirst detection optical path and a second detection optical path, theforegoing darkfield detection optical system further having, on thefirst detection optical path, first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight having the wavelength band which has been selected by thewavelength selection optics, and the darkfield detection optical systemfurther having, on the second detection optical path, second imagingoptics for imaging onto a light-receiving surface of a second imagesensor the second scattered light having the wavelength band which hasbeen selected by the wavelength selection optics; and

an image processor which, in accordance with an image signal(s) obtainedfrom the first image sensor or/and second image sensor of the darkfielddetection optical system, discriminates defects or defect candidatespresent on the surface of the sample.

Yet another aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and wavelength selectionoptics for selecting a wavelength band for the scattered light that hasbeen converged by the reflecting objective lens, and after thewavelength band selection, branching the scattered light into at least afirst detection optical path and a second detection optical path, thedarkfield detection optical system further having, on the firstdetection optical path, a first spatial filter for optically shielding,of all the first scattered light having the wavelength band which hasbeen selected by the wavelength selection optics, only a diffractionimage arising from a periodic circuit pattern formed on the surface ofthe sample, and first imaging optics for imaging onto a light-receivingsurface of a first image sensor the first scattered light that has beenpassed through the first spatial filter, and the darkfield detectionoptical system further having, on the second detection optical path, asecond spatial filter for optically shielding, of all the secondscattered light having the wavelength band which has been selected bythe wavelength selection optics, only a region high in an intensitydistribution of the scattered light arising from a non-periodic circuitpattern formed on the surface of the sample, and second imaging opticsfor imaging onto a light-receiving surface of a second image sensor thesecond scattered light that has been passed through the second spatialfilter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

In a further aspect of the present invention, the darkfield detectionoptical system further has a first polarizing filter on the firstdetection optical path, and a second polarizing filter on the seconddetection optical path. In a further aspect of the present invention,the darkfield detection optical system further has an ND filter forreduction in intensity of the light, on the first detection optical pathor the second detection optical path.

In a further aspect of the present invention, the image processorselects the first image signal or the second image signal, dependingupon at least whether the circuit pattern of interest, formed on thesurface of the sample, has periodicity, and then discriminates thedefects or the defect candidates. In a further aspect of the presentinvention, the light-receiving surfaces of the first and second imagesensors in the darkfield detection optical system are formed into arectangular shape, and the irradiation light in the darkfieldillumination optical system is a slit-shaped beam corresponded to therectangular field shape of the light-receiving surfaces.

A further aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first wavelengthselection filter for selecting a first wavelength band from adistribution of the scattered light which has been branched by thebranching optics, and first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight having the first wavelength band which has been selected by thefirst wavelength selection filter, and the darkfield detection opticalsystem further having, on the second detection optical path, a secondwavelength selection filter for selecting a second wavelength band fromthe distribution of the scattered light which has been branched by thebranching optics, and second imaging optics for imaging onto alight-receiving surface of a second image sensor the second scatteredlight having the second wavelength band which has been selected by thesecond wavelength selection filter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

A further aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first wavelengthselection filter for selecting a first wavelength band from adistribution of the scattered light which has been branched by thebranching optics, a first spatial filter for optically shielding, of allthe first scattered light having the first wavelength band which hasbeen selected by the first wavelength selection filter, only adiffraction image arising from a periodic circuit pattern formed on thesurface of the sample, and first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight which has been passed through the first spatial filter, and thedarkfield detection optical system further having, on the seconddetection optical path, a second wavelength selection filter forselecting a second wavelength band from the distribution of thescattered light which has been branched by the branching optics, asecond spatial filter for optically shielding, of all the secondscattered light having the second wavelength band which has beenselected by the second wavelength selection filter, only a region highin an intensity distribution of the scattered light arising from anon-periodic circuit pattern formed on the surface of the sample, andsecond imaging optics for imaging onto a light-receiving surface of asecond image sensor the second scattered light which has been passedthrough the second spatial filter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

A further aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first spatialfilter for optically shielding the light diffracted from a periodiccircuit pattern formed on the surface of the sample, and first imagingoptics for imaging onto a light-receiving surface of a first imagesensor the first scattered light which has been passed through the firstspatial filter, the foregoing darkfield detection optical system furtherhaving, on the second detection optical path, a second spatial filterfor optically shielding a region high in an intensity distribution ofthe scattered light arising from a non-periodic circuit pattern formedon the surface of the sample, and second imaging optics for imaging ontoa light-receiving surface of a second image sensor the second scatteredlight which has been passed through the second spatial filter, and theforegoing darkfield detection optical system further having, on thefirst detection optical path or the second detection optical path, an NDfilter for reduction in intensity of the light; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

A further aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system which, after rectangularlyshaping irradiation light having a plurality of wavelength bands,irradiates the surface of a sample from an oblique direction;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight of the plural wavelength bands by the darkfield illuminationoptical system, and branching optics for branching the scattered lightthat has been converged by the reflecting objective lens, into at leasta first detection optical path and a second detection optical path, thedarkfield detection optical system being adapted to cause either aspatial filter or a polarizer, or both thereof, to differ in settingstate between the first detection optical path and the second detectionoptical path such that the scattered beams of light, obtained on thedetection optical paths, will differ from each other in characteristics,

further has, on the first detection optical path, a first spatial filterand a first polarizer, on the second detection optical path, a secondspatial filter and a second polarizer, and on at least either of thefirst and second detection optical paths, an ND filter, and

further has, on the first detection optical path, first imaging opticsfor imaging onto a light-receiving surface of a first image sensor thefirst scattered light obtained after being passed through the firstspatial filter and the first polarizer, and on the second detectionoptical path, second imaging optics for imaging onto a light-receivingsurface of a second image sensor the second scattered light obtainedafter being passed through the second spatial filter and the secondpolarizer; and an image processor which, in accordance with a firstimage signal obtained from the first image sensor of the darkfielddetection optical system, or/and a second image signal obtained from thesecond image sensor, discriminates defects or defect candidates presenton the surface of the sample.

A further aspect of the present invention is a defect inspectionapparatus including:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with an illumination beam oflight from an oblique direction;

a darkfield detection optical system with branching optics for branchingthe converged light into a first detection optical path and a seconddetection optical path,

has, on the first detection optical path formed by the branching optics,a first spatial filter for optically shielding a diffraction imagearising from a periodic circuit pattern formed on the surface of thesample, and a first detector for receiving an optical image of the lightscattered from the periodic circuit pattern after being passed throughthe first spatial filter and imaged, and then converting the image intoa first image signal,

has, on the second detection optical path formed by the branchingoptics, a second spatial filter for optically shielding, of all thescattered light arising from a non-periodic circuit pattern formed onthe surface of the sample, only the scattered light in a region high inintensity distribution, and a second detector for receiving an opticalimage of the light scattered from the non-periodic circuit pattern afterbeing passed through the second spatial filter and imaged, and thenconverting the image into a second image signal, and

has, on at least either of the first and second detection optical paths,an ND filter for reducing the light in intensity; and

an image processor which, in accordance with either a first image signalobtained from the first detector provided on the first detection opticalpath of the darkfield detection optical system, or a second image signalobtained from the second detector provided on the second detectionoptical path of the darkfield detection optical system, discriminatesdefects or defect candidates present on the surface of the sample.

These and other objects, features and advantages of the invention willbe apparent from the following more particular description of preferredembodiments of the invention, as illustrated in the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a schematic configuration of a defectinspection apparatus of the present invention;

FIG. 2 is a configuration diagram showing an example of an opticalsystem which includes a darkfield illumination optical system anddarkfield detection optical system in a defect inspection apparatus ofthe present invention;

FIG. 3 is a diagram showing a schematic configuration of the darkfieldillumination optical system which uses multi-wavelength illumination(i.e., illumination with irradiation light having a plurality ofwavelength bands) according to the present invention;

FIG. 4 is a view that shows the surface and section A-A′ of a mixed-typewafer to be inspected according to the present invention;

FIGS. 5A, 5B, and 5C are explanatory diagrams that show examples of anapertured non-periodic type of spatial filter formed in the presentinvention; FIG. 5A showing an intensity distribution of scattered lightobtained from a non-periodic circuit pattern, FIG. 5B showing a firstexample of the apertured non-periodic type of spatial filter, and FIG.5C showing a second example of the apertured non-periodic type ofspatial filter;

FIGS. 6A and 6B are diagrams that show other examples of the aperturednon-periodic type of spatial filter formed in the present invention;FIG. 6A showing an example in which a double-refracting material isformed in any one of multiple apertures, and FIG. 6B showing an examplein which a material for assigning a phase difference π is disposed;

FIG. 7 is a diagram showing an example of a mechanism for switching aspatial filter in the present invention;

FIG. 8 is a block diagram showing a first example of an image processorused in the present invention;

FIG. 9 is a block diagram showing a second example of an image processorused in the present invention;

FIG. 10 is a diagram showing an example of an inspection recipe creationfunction of the image processor in the present invention;

FIG. 11 is a flow diagram showing an example of a procedure forselecting a light-shielding element of a spatial filter in the presentinvention;

FIG. 12 is an explanatory diagram of field stop setting according to thepresent invention;

FIG. 13 is a flow diagram showing an example of a procedure forassigning optical parameters in the present invention; and

FIG. 14 is a configuration diagram showing another example of an opticalsystem which includes a darkfield illumination optical system anddarkfield detection optical system in a defect inspection apparatus ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereunder, embodiments of a method and apparatus according to thepresent invention for inspecting defects, contamination, and otherforeign substances present on minute patterns formed on a substratethrough a thin-film process will be described using the accompanyingdrawings.

First Embodiment

A schematic configuration of an optical defect inspection apparatusaccording to the present invention is shown in FIG. 1. A darkfieldillumination optical system 10 conducts oblique darkfield illuminationupon a wafer (sample) 1 from a normal direction thereof withillumination light of a plurality of wavelengths or a plurality ofwavelength bands, through an exterior of a reflecting objective lens. Adarkfield detection optical system 20 with a reflecting objective lens22 free from chromatic aberration captures (converges) the lightscattered from the defects or other foreign substances or patternsexisting on the wafer (sample) 1. The darkfield detection optical system20 has a beam splitter 24 to branch a detection optical path into afirst detection optical path and a second detection optical path. Thebeam splitter 24 is either a dichroic mirror for wavelength separation,a polarized beam splitter for polarized beam separation, or a beamsplitter for simple branching based on a half-mirror. On the firstdetection optical path 21 a (equivalent to a memory block), thedarkfield detection optical system 20 also has a first spatial filter 50for optically shielding a diffraction image (diffraction pattern)arising from a periodic pattern region formed on the surface of thewafer 1, such as the memory block. On the second detection optical path(equivalent to a logic circuit block) 21 b, the darkfield detectionoptical system 20 has a neutral density (ND) filter 90 to reduce theamount of light. In addition, the darkfield detection optical system 20has switchable second spatial filters 95 a and 95 b. The second spatialfilters 95 a and 95 b have a specific aperture shape 95 a or 95 b,respectively, not such a periodic shape as that of the logic circuitblock formed on the surface of the wafer 1. The darkfield detectionoptical system 20 further has one set of polarizers (polarizingfilters), 30 and 35, on the first detection optical path 21 a, and oneset of polarizers (polarizing filters), 80 and 85, on the seconddetection optical path 21 b. Besides, the darkfield detection opticalsystem 20 has a first image sensor 200 and a second image sensor 210 onimage-forming surfaces of the first detection optical path 21 a andsecond detection optical path 21 b, respectively. Detection imagesignals that have been generated by detection with the first and secondimage sensors 200, 210 are transmitted to an image processor 230. Asshown in FIGS. 7 and 8, the image processor 230 conducts positionmatching between each received detection image signal and, for example,an adjacent image signal (reference image signal), and detects defectsor defect candidates by comparing the position-matched image signals.That is to say, the detection image signal obtained from the first imagesensor 200 is used to detect the defects or defect candidates thatoccurred or have occurred in the memory block, and the detection imagesignal obtained from the second image sensor 210 is used to detect thedefects or defect candidates that occurred or have occurred in the logiccircuit block.

Although the configuration for oblique illumination is shown in FIG. 1,the inspection apparatus may be constructed to have a mirror 405 on theoptical path of the illumination light and bend this optical path sothat the wafer 1 is perpendicularly illuminated via an objective lens22. To conduct darkfield detection under this structure, the detectionoptical path 21 a, 21 b or a common optical path needs to have a spatialfilter so as to shield regularly reflected light or diffracted light.This spatial filter will be detailed using FIG. 2. It is easilyconceivable that an achromatic catadioptric or dioptric objective lenscould be used as an alternative for the reflecting objective lens.

Coordinates and sizes of the defects or defect candidates that weredetected have been detected in each region by the image processor 230,or image feature quantities of the detected defects or defectcandidates, and other defect information are sent to an operating unit290. The operating unit 290 is a device provided for a person to operatethe inspection apparatus. The operating unit 290 is used, for example,to create inspection recipes, specify inspection based on a createdrecipe, display a map of inspection results, and display the imagefeature quantities of the detected defects. For example, when inspectionis specified from the operating unit 290, an instruction is sent from amechanism controller 280 to a stage 282 to move the stage 282 to astarting position of the inspection. A distance through which the stage282 has been moved is sent therefrom to the mechanism controller 280,which then judges whether the wafer 1 has been positioned within atolerance with respect to the movement distance. If the wafer has beenpositioned outside the tolerance, feedback control is conducted toposition the wafer within the tolerance. Next if the first image sensor200 and the second image sensor 210 are one-dimensional image sensors(including a time delay integration (TDI) type), an image of the surfaceof the wafer 1 is acquired while the stage 282 is being moved at aconstant speed. For TDI image sensors, since nonuniformity in the speedof the stage 282 causes detection image blurring, speed information onthe stage 282 is sent to the mechanism controller 280 to ensuresynchronization with vertical transfer timing of the image sensor 200,210. In addition, warpage of the surface of the wafer 1 or aZ-directional deviation of the stage during movement may cause aposition on the surface of the wafer 1 to shift with respect to a focalposition of the optical system. Accordingly, for example, a slit imageis projected from an auto-focus (AF) illumination system 250 onto thesurface of the wafer 1, then the slit image that has reflected is formedby an AF detection system 260, and this slit image is detected by anoptical detector 270. Information of the detected slit image is sent tothe mechanism controller 280 and height information of the wafer 1 iscalculated. Height of the wafer 1 can be detected by calculating aposition of the detected slit image. This scheme is an AF schemegenerally called an optical lever method. A through-the-lens (TTL)optical lever method, a striped pattern projection method, and the likeare known in addition to the AF scheme. If a difference between thefocal position of the darkfield detection optical system 20 and theheight of the wafer 1 that has been detected using the AF scheme isoutside the tolerance, a driving instruction is given from the mechanismcontroller 280 to a Z-axis actuator of the stage 282 so that thedifference falls within the tolerance. This prevents defocusing of theimages detected by the first and second image sensors 200, 210.

In addition, as shown in FIG. 2, each of the first and second imagesensors 200, 210 disposed on the first and second detection opticalpaths 21 a, 21 b which were created by the beam splitter 24 detects animage of the same position on the wafer 1, in the darkfield detectionoptical system 20. For example, if the wafer 1 is a mixed-type wafer(such as system LSI) formed by an array of dies on each of which amemory block with a periodic cell pattern and a logic circuit block withan irregular logic pattern are arranged, a diffracted light pattern(diffraction image) from the memory block with the periodic circuitpattern is, as shown in FIG. 19 of Patent Document 2, shielded by thefirst spatial filter 50 disposed on the first detection optical path 21a, the first spatial filter 50 being an element constructed by arecurring optical shield. For the image detected by the first imagesensor 200, therefore, only the light scattered from a random defect isdetected, whereas, since the light scattered from the logic circuitblock having an irregular logic pattern formed thereon cannot beshielded using the first spatial filter 50 provided on the firstdetection optical path 21 a, a greater amount of light reaches the firstimage sensor 200. Accordingly, the above difference in the amount oflight detected is corrected by the intensity-reducing ND (NeutralDensity) filter 90 disposed on the second detection optical path 21 b,and image signals associated with respective regions of both the memoryblock and the logic circuit block are detected by the first image sensor200 and the second image sensor 210, in an appropriate dynamic rangebetween the two image sensors. During such detection of the images inthe respective regions in the appropriate dynamic range, internalregions of the dies arrayed on the wafer 1 are each split into aplurality of segments with attention focused on the difference in theperiodicity of the circuit patterns, and the first image sensor 200 andthe second image sensor 210 detect image signals for each segmentindependently. For example, regarding the memory block and the logiccircuit block, the internal regions of each die arrayed on the wafer 1are each split into two segments on the basis of the difference in theperiodicity of the circuit patterns, and image signals associated witheach segment are detected by the first image sensor 200 disposed on thefirst detection optical path 21 a, and the second image sensor 210disposed on the second detection optical path 21 b. Although installingthe apertured non-periodic spatial filter 95 and the ND filter 90 on thesecond detection optical path 21 b has been described above, if asignificantly small aperture size is set for the apertured non-periodicspatial filter 95, the amount of pass-through light detected willdecrease, so in this case, the ND filter 90 may be installed on thefirst detection optical path 21 a. In addition, although an example inwhich one region is split into two segments on the basis of thedifference in periodicity has been described above, it is obvious thatsplitting one region into a larger number of segments (say, 3, 4, or 5)and then detecting respective images with an associated number of imagesensors stays within the scope of the present invention. Such splittinginto a large number of segments can be accomplished by splitting thedetection optical path into a large number of detection optical pathsand disposing an image sensor on each detection optical path.Furthermore, for example, a dichroic mirror (wavelength separationoptics) for branching based on wavelength separation, a polarized beamsplitter for branching based on polarized beam separation, or a beamsplitter for simple branching, as with a half-mirror, can be used as abranching method.

Next, details of the darkfield illumination optical system 10 and thedarkfield detection optical system 20 are described below using FIG. 2.An off-axis illumination scheme with an optical axis disposed obliquelywith respect to the wafer 1, or a TTL scheme for illuminating the wafer1 through the reflecting objective lens 22 is available for thedarkfield illumination optical system 10. Both schemes can be applied inthe present invention. In the present embodiment, however, the off-axisscheme is described below. The optical axis of the darkfieldillumination optical system 10 is inclined obliquely with respect to theline normal to the surface of the wafer 1 (with respect to the surfaceof the wafer 1, formed at an elevation α. The light source 11 can be alaser light source or lamp source (such as mercury, mercury xenon, orxenon lamp) that emits illumination light which has a plurality ofwavelengths (luminous spectra) or a plurality of wavelength bands. If alaser light source is to be used, this can be a YAG solid-state laserwith a second higher-harmonic wavelength of 532 nm, a thirdhigher-harmonic wavelength of 355 nm, a fourth higher-harmonicwavelength of 266 nm, a KrF wavelength of 248 nm, an ArF wavelength of193 nm, or for stronger laser light, 199 nm. It is possible, as shown inFIG. 3, to provide a plurality of such laser light sources, 12 a and 12b, emit laser beams therefrom at the same time, and synthesize the beamsinto multi-wavelength illumination light including a plurality ofwavelengths or wavelength bands, via a dichroic mirror 13. If a lamplight source is to be used, this can be a mercury lamp or a mercuryxenon lamp, in which case, multi-wavelength illumination light thatincludes wavelengths of 578 nm, 547 nm, 436 nm, 405 nm, and 365 nm canbe formed as luminous spectra. An alternative lamp light source can be axenon lamp, in which case, multi-wavelength illumination light with theabove luminous spectra superimposed on visible light of a wide band canbe formed. As the illumination wavelength is reduced, a greater amountof light will be scattered from minute defects. For this reason, thekind of light applied would be, for example, light of a visibleorange-blue band with a wavelength from about 450 nm to about 650 nm(this light may further consist of components with a wavelength bandfrom about 450 nm to about 550 nm, and components with a wavelength bandfrom about 550 nm to about 650 nm), or purple-band UV (ultraviolet)light or DUV (deep ultraviolet) light with a wavelength up to about 440nm. An example of using a laser light source as the light source 11 inthe present embodiment is described below. Multi-wavelength laser lightthat has been emitted from the laser light source 11 is first refractedin a direction of an angle of incidence by a non-spherical lens ornon-spherical mirror (e.g., cylindrical lens) 15 that is a shapingoptical section. Next, the surface of the wafer 1 isdarkfield-irradiated with the refracted laser light in the form of alinear beam (slit-shaped beam) 16 obtained by shaping original parallelbeams of light within a plane orthogonal to the angle of incidence. Thelinear beam 16 that has been shaped by the shaping optics extends in aplanarly crossing direction with respect to the X-direction shown inFIG. 4. This allows the wafer surface to be irradiated linearly (in slitbeam form) in association with rectangular fields of the first andsecond image sensors 200, 210, and multi-wavelength illumination lightof high illumination intensity to be irradiated as the linear beam(slit-shaped beam) efficiently in association with the above rectangular(slit-shaped) fields. Accordingly, a plurality of lower-output and lessexpensive laser light sources 12 a, 12 b can be used to satisfy theintensity required of the multi-wavelength linear beam, and using theselaser light sources 12 a, 12 b is advantageous for suppressing apparatuscosts. In addition, multi-wavelength illumination makes it possible tosuppress changes in the amount of light (i.e., changes in brightness)that arise from scattering from the circuit patterns or defects on thewafer 1 due to subtle changes in thickness of a transparent film (suchas an oxide film) formed on the wafer.

Next as shown in FIGS. 3 and 4, a defect 4 or circuit pattern 3 on thewafer 1 is darkfield-irradiated with the multi-wavelength linear beam 16from at least an oblique direction, and of all light that has beenscattered or diffracted on the surface of the wafer 1, only light thatenters apertures of the reflecting objective lens 22 disposed above thewafer is captured (collected) by the achromatic reflecting objectivelens 22. The reflecting objective lens 22 has, for example, a numericalaperture (NA) equal to or greater than 0.6 and less than 1.0. Theoptical axis 25 of the reflecting objective lens 22 constituting thedarkfield detection optical system 20 may be inclined to the normal lineof the wafer 1. The light that has been captured by the reflectingobjective lens 22 is branched into two optical paths by the beamsplitter 24. For example, the beam splitter 24 is either a dichroicmirror 24 a for wavelength separation (i.e., wavelength separationoptics), a polarized beam splitter 24 b (not shown) for polarized beamseparation, or a beam splitter for simple branching. If dichroic mirror(wavelength separation optics) 24 a is used as the beam splitter(branching optics) 24, the light is separated and branched intowavelengths suitable for the defective material, the object to beinspected. After the light has been branched into two optical paths bythe beam splitter 24, functionality equivalent to that of the dichroicmirror (wavelength separation optics) can be implemented by providing awavelength separation filter on each optical path.

If the object to be inspected is a gate, defects will assume a brightcolor in a wavelength band from about 400 nm to about 450 nm. If theobject to be inspected is aluminum (Al) wiring, this wiring material mayhave TiN stacked on the surface. The TiN layer has the characteristicsthat a reflectance thereof increases in a wavelength range of 450-500nm. Depending on a relationship between a reflectance of the pattern andthat of a background (base material), therefore, the wavelengths thatallow high-contrast detection of defects may decrease below 450 nm orincrease above 500 nm. If the object to be inspected is metallic wiringor the like and the wiring material is copper (Cu), defects will assumea bright color in a wavelength band from about 550 nm to about 700 nm.If the object to be inspected is an element separator, there is nowavelength dependence since the separator is formed up of Si and SiO₂.As can be seen from these facts, if spectral and optical constants ofthe material used for the semiconductor are considered andshort-wavelength and long-wavelength sides of spectral characteristicschange points at which optical constants (n, k) of the semiconductormaterial suffer changes are both made usable for illumination, thisillumination method will be effective for high-sensitivity inspection ofa wide variety of wafers varying in process and structure. That is tosay, splitting illumination light into a band of UV light, a blue bandof visible light, a green band of visible light, and a red band ofvisible band, is effective in that this splitting method makes itpossible for the inspection apparatus to substantially cover theshort-wavelength and long-wavelength sides of the spectral constant andspectral reflectance change points mentioned above.

More specifically, a wavelength band of the visible light obtained fromthe darkfield illumination optical system 10 is narrowed to about450-650 nm, for example, and the scattered or diffracted light that hasbeen collected by the reflecting objective lens 22 disposed in thedarkfield detection optical system 20 is separated into two wavelengthbands (e.g., in order to realize reflection in a yellow-green band ofabout 550-650 nm and transmission in a blue-purple band of about 450-550nm) by the wavelength separation optics (dichroic mirror) 24 a. Thefirst and second image sensors 200, 210 and the first and second spatialfilters 50, 95 are therefore provided for each of the wavelength bands.

Even more specifically, on the first detection optical path 21 a formedby passage through the wavelength separation optics 24 a, the firstspatial filter 50 is disposed on a Fourier transform plane of the waferimage. The first spatial filter 50 can be of a periodic shielding typein which a periodic diffraction image (diffraction pattern) formed onthe Fourier transform plane will be shielded according to theperiodicity of the pattern formed in, for example, the memory block ofthe wafer 1. Alternatively, the first spatial filter 50 can be of anapertured non-periodic type having a specific aperture shape, not aperiodic pattern shape, to ensure that as shown in FIG. 5A, if thepattern does not have periodicity, a region 3 s, 3 r that is high inintensity distribution of the light scattered from the logic circuitblock or other non-periodic pattern sections is shielded and scatteredlight of a low region is passed through. The periodic shielding spatialfilter is constructed to render the optical shield changeable in pitchso that even if the diffraction image changes in pitch, the diffractedlight can be shielded. A plurality of apertured non-periodic spatialfilters are provided that each has a plurality of different apertureshapes, as shown in FIG. 5B, 5C or 6A, 6B. The two types of spatialfilters are selectively usable via a spatial filter selector 430.

Light that has been passed through the spatial filter 50 can be changedinto a specific polarized state by further passing the light through aquarter-wavelength plate 30. This beam of light is further filtered by apolarizer 35. The quarter-wavelength plate 30 and the polarizer 35 aremounted in a polarizer selection mechanism 400 that can be rotated andmoved into and out from the optical path. The polarizer selector 400 isadapted to make the wavelength plate 30 and the polarizer 35rotationally controllable, independently of each other, in accordancewith a control command from the mechanism controller 280. The light,after being passed through the polarizers 30, 35, is converged on thefirst image sensor 200 through an imaging lens 55 to form a darkfieldimage on the first image sensor 200.

In addition, an imaging lens 57 different from the above imaging lens 55in focal distance is provided to change a magnification at which thedarkfield image will be projected in enlarged form on the first imagesensor 200. When the magnification change is conducted, the imaging lenshaving a focal distance appropriate for the selected magnification ispositioned on the optical path by an imaging lens selector 440.

Furthermore, a two-dimensional image sensor 65 a is disposed so that atwo-dimensional image of the wafer 1 can be detected under a stationarystate thereof. The image sensor 65 a is mainly used for purposes such ascreating an inspection recipe prior to inspection. When the image sensor65 a is unnecessary, the inspection apparatus retreats a beam splitter60 a from the first detection optical path 21 a by operating amove-in/out mechanism 420 a in accordance with a control command fromthe mechanism controller 280.

By the way, for a mixed-type wafer (such as system LSI) provided with amemory block in which a periodic circuit pattern is formed, and with alogic circuit block in which an irregular (non-periodic) circuit patternis formed, since the shape, pitch, and wiring direction of the circuitpattern change according to a particular kind of system LSI, theperiodic shielding spatial filter 50 formed by a recurrence of aniterative light-shielding pattern also needs to be changed in shieldingposition. In addition, since the distribution of scattered light changesaccording to a particular shape of the defect, the kind of materialsused, and the darkfield illumination parameters used, there is a need tochange positions of the apertures of the apertured non-periodic spatialfilters 50 provide with a plurality of apertures that permit the lightfrom the defect to pass through. For these reasons, to conduct optimalspatial filtering, it is necessary to optimize the shape of the spatialfilter 50 according to the particular shape of the circuit pattern 3 ordefect 4. Similarly, effectiveness of polarized filtering for permittingonly a larger amount of scattered light from the defect 4 to passthrough the first image sensor 200 also requires monitoring. Formonitoring the diffraction image from the circuit pattern 3 or defect 4on the first detection optical path 21 a, therefore, a move-in/outmechanism 410 a positions the beam splitter 40 a at rear of the spatialfilter 50 and the polarizer 30, 35, on the first detection optical path21 a, and the light to be detected is split by the beam splitter 40 a.An imaging lens 27 a forms the split light into an image having arelationship conjugate to the spatial filter surface, and atwo-dimensional image sensor 25 a detects the formed conjugate image.The image that the image sensor 25 a has formed, and the darkfield imagethat the image sensor 200 of the wafer conjugate plane has detected areused to analyze the filtering effect and determine filtering parametersfor obtaining an appropriate filter. The beam splitter selector 410 a isadapted to move in/out the beam splitter 40 a in accordance with acontrol command from the mechanism controller 280.

For the detection of the light scattered from the defect 4, inparticular, a field stop 26 whose field size on the wafer ranges from 1μm to 10 μm is provided so that only the light exposed to a peripheralregion of the defect will be passed through. The field stop 26 providedon the first detection optical path 21 a is not shown in the relevantfigure. Reference number 28 denotes a collimator lens. Light that thetwo-dimensional camera 25 a has detected via the collimator lens isprimarily formed only of the light scattered from the defect region, andthis explicitly represents the filtering effect.

Meanwhile, on the second detection optical path 21 b formed by thereflection and branching at the wavelength separation filter 24 a, theinspection apparatus further includes a second spatial filter 95 (thisfilter can be of the periodic shielding type or the aperturednon-periodic type), a second quarter-wavelength plate 80, a secondpolarizer 85, second imaging lenses 100 and 110 different from eachother in focal distance, and a second image sensor 210. These opticalelements are substantially the same as those arranged on the firstdetection optical path 21 b. Between the first detection optical path 21a and the second detection optical path 21 b, since a filtering statediffers, the amounts of light reaching the image sensors 200, 210 willalso differ. When sensitivities of the image sensors 200, 210, gainsobtained when sensor output analog signals are converted into digitalform, or other parameters are the same, if the above difference in theamount of light is corrected to obtain much the same amount of lightbetween the image sensors 200, 210, dynamic ranges of the image sensors200, 210 can be effectively used. In order to achieve this, much thesame amount of light between the image sensors 200, 210 can be obtainedby disposing an ND (neutral density) filter 90 on the optical pathlarger in the amount of light detected (in the present embodiment, thesecond detection optical path 21 b including the second spatial filter95 of the apertured non-periodic type, not the periodic shielding type).The spatial filter selector 470, the polarizer rotate and move-in/outmechanism 450, and the imaging lens selector 480 have substantially thesame functions as those of the equivalent optical elements disposed onthe first detection optical path 21 a. The inspection apparatus also hasan ND filter selector 460 to conduct adjustments for much the sameamount of light detected. The polarizer selector 450 is adapted to makeindependent rotational control of the wavelength plate 80 and thepolarizer 85 each in accordance with the appropriate control commandfrom the mechanism controller 280. Reference numbers 71 and 72 denote alens and a collimator lens, respectively. Also, a two-dimensional imagesensor 65 b is disposed so that a two-dimensional image of the wafer 1can be detected under the stationary state thereof. The image sensor 65b is mainly used for purposes such as creating an inspection recipeprior to inspection. When the image sensor 65 b is unnecessary, theinspection apparatus retreats a beam splitter 60 b from the seconddetection optical path 21 b by operating a move-in/out mechanism 420 bin accordance with a control command from the mechanism controller 280.

Furthermore, to conduct optimal spatial filtering on the seconddetection optical path 21 b, it is also necessary to optimize the shapeof the spatial filter 95 according to the particular shape of thecircuit pattern 3 or defect 4. Similarly, the effectiveness of polarizedfiltering for permitting only a larger amount of scattered light fromthe defect 4 to pass through the image sensor 210 also requiresmonitoring. For monitoring the diffraction image from the circuitpattern on the second detection optical path 21 b, therefore, amove-in/out mechanism 410 b positions the beam splitter 40 b at the rearof the spatial filter 95 and the polarizer 80, 85, on the seconddetection optical path 21 b, and the light to be detected is split bythe beam splitter 40 b. An imaging lens 27 b forms the split light intoan image having a relationship conjugate to the spatial filter surface,and a two-dimensional image sensor 25 b detects the formed conjugateimage. The beam splitter selector 410 b is adapted to move in/out thebeam splitter 40 b in accordance with a control command from themechanism controller 280.

The image that the image sensor 25 b has formed, and the darkfield imagethat the image sensor 210 of the wafer conjugate plane has detected areused to analyze the filtering effect and determine filtering parametersfor obtaining an appropriate filter. For the detection of the lightscattered from the defect 4, in particular, a field stop 26 whose fieldsize on the wafer ranges from 1 μm to 10 μm is provided at a focalposition of a lens 71 so that only the light exposed to the peripheralregion of the defect will be passed through. Light that thetwo-dimensional camera 25 b has detected is primarily formed only of thelight scattered from the defect region, and this explicitly representsthe filtering effect.

While an example of bifurcating one detection optical path has beendescribed in the present embodiment, it is obvious that detection oflight by a detection system having more detection optical paths alsofalls within the scope of the present invention.

In addition, any one of the two detection optical paths that have beenformed by branching can be selectively used considering several factors.These factors are, for example, the periodicity of the pattern 3 formedon the wafer 1, and the kind of defect to be detected. For example, aperiodic pattern region such as the memory block, and a non-periodicregion such as the logic circuit block are distinguished duringprocessing, and for the memory block, a defect or a defect candidate isdiscriminated using the image acquired on the first detection opticalpath 21 a, whereas for the logic circuit block, a defect or a defectcandidate is discriminated using the image acquired on the seconddetection optical path 21 b.

For the memory block, since the diffraction image is periodic, thespatial filter 50 with equally pitched linear optical shields isassigned to the first detection optical path 21 a. For a non-periodicregion such as the logic circuit block, the apertured non-periodicspatial filter 95 is assigned to the second detection optical path 21 b.Thus, images advantageous for defect detection can be detected byconducting optimized spatial filtering for each pattern region.

Furthermore, a method of discriminating the detection optical pathaccording to the kind of defect (such as a scratch) is also available.This means that polarized filtering different between the detectionoptical paths is conducted. Contrast of the defect 4 changes accordingto a particular direction, shape, and position of the defect 4 (thesefactors include the difference in position, such as whether the defectis present on or inside a stacked layer), the relationship in positionwith respect to the peripheral pattern 3, and other factors. Therefore,polarized filtering different between the first detection optical path21 a and the second detection optical path 21 b is conducted, thecontrast of the defect 4 is enhanced on either detection optical path,and a capturing ratio of the defect 4 existing on the wafer 1 is raisedthrough the reflecting objective lens 22. The methods of filtering setupfor the two detection optical paths according to the periodicity of thepattern 3 and the kind of defect have been set forth above, but asetting method consisting of a combination of the above methods is alsousable.

When a polarized beam splitter 24 b (not shown) is to be used as thebeam splitter 24 for detection optical path branching in the darkfielddetection optical system 20, the darkfield illumination optical system10 needs to have, between the dichroic mirror 13 and the cylindricallens 15, a half-wavelength plate (not shown) for changing a polarizingdirection, and a quarter-wavelength plate (not shown) for transformingthe beam into a circularly polarized beam or an elliptically polarizedbeam. The darkfield illumination optical system 10 also needs toirradiate the surface of the wafer 1 with a multi-wavelengthS-polarized, P-polarized, or elliptically polarized linear beam(including a circularly polarized beam whose ellipticity is 1) obliquelyfrom the normal direction of the wafer 1. As a result, the scattered ordiffracted light obtained from the wafer 1 can be converged upon thereflecting objective lens 22, and then the converged light can beseparated into, for example, an S-polarized beam and a P-polarized beamvia the foregoing polarized beam splitter (not shown) and branched intothe first detection optical path 21 a and the second detection opticalpath 21 b.

For defect or defect candidate discrimination, the two images of onespace that have been detected by the two image sensors, 200 and 210, arealso usable to discriminate the defect or the defect candidate 4.Additionally, since using the two images of the same space allows agreater amount of information on the defect 4 to be obtained, the twoimages are likely to be utilizable for classifying the defect 4according to, for example, criticality of the device, the position ofthe defect (whether the defect is present on a top layer or inside alayer), or a size of the defect, as well as for discriminating thedefect or the defect candidate. These also lie within the scope of thepresent invention.

In another example, as shown in FIG. 14, the first image sensor 200 andsecond image sensor 210 disposed on the first detection optical path 21a and second detection optical path 21 b, respectively, created by thebeam splitter 24 in the darkfield detection optical system 20, detect animage of the same position on the wafer 1. For example, if the wafer 1is a mixed-type wafer (such as system LSI) provided with a memory blockin which a periodic cell pattern is formed, and with a logic circuitblock in which an irregular logic pattern is formed, a diffraction-lightpattern (diffraction-light fringe) from the memory block having aperiodic cell pattern formed thereon is shielded by the first spatialfilter 50 of an iterative shielding pattern shape, disposed on the firstdetection optical path 21 a created by the beam splitter 24 in thedarkfield detection optical system 20. For the image detected by thefirst image sensor 200, therefore, only the light scattered from arandom defect is detected, whereas, since the light scattered from thelogic circuit block having an irregular logic pattern formed thereoncannot be shielded using the first spatial filter 50 such as the memoryblock, a greater amount of light reaches the first image sensor 200.Accordingly, the difference in the amount of light detected is correctedby the intensity-reducing ND filter 90 disposed on the second detectionoptical path 21 b created by the beam splitter 24, and image signalsassociated with the respective regions of both the memory block and thelogic circuit block are detected by the first image sensor 200 and thesecond image sensor 210, in the appropriate dynamic range between thetwo image sensors. During such detection of the images in the respectiveregions in the appropriate dynamic range, the internal regions of thedies arrayed on the wafer 1 are each split into a plurality of segmentswith attention focused on the periodicity and non-periodicity of thecircuit patterns, and the first image sensor 200 and the second imagesensor 210 detect image signals for each segment independently. Althoughan example in which one region is split into two segments with attentionfocused on the periodicity and non-periodicity of the circuit patternshas been described above, it is obvious that splitting one region into alarger number of segments (say, 3, 4, or 5) and then detectingrespective images with an associated number of image sensors stayswithin the scope of the present invention. Such splitting into a largenumber of segments can be accomplished by splitting the detectionoptical path into a large number of detection optical paths anddisposing an image sensor on each detection optical path. In addition,although installing the apertured non-periodic spatial filter 95 and theND filter 90 on the second detection optical path 21 b has beendescribed above, if a significantly small aperture size is set for theapertured non-periodic spatial filter 95, the amount of pass-throughlight detected will decrease, so in this case, the ND filter 90 may beinstalled on the first detection optical path 21 a.

Furthermore, if the first image sensor 200 and the second image sensor210 are each constructed using TDI sensors, an appropriate brightnesslevel of an image signal can be obtained in both the memory block andthe logic circuit block by changing independently the number of firstTDI sensor stacking stages (i.e., changing a stacking time) and that ofsecond TDI sensor stacking stages, for the memory block and the logiccircuit block each.

Next, details of the darkfield illumination optical system 10 anddarkfield detection optical system 20 in the present embodiment aredescribed below using FIG. 2. The off-axis illumination scheme with anoptical axis disposed obliquely with respect to the wafer 1, or the TTLscheme for illuminating the wafer 1 through the reflecting objectivelens 22 is available to dispose the darkfield illumination opticalsystem 10. Both schemes can be applied to the darkfield illuminationoptical system 10. In the present embodiment, however, the dispositionwith the off-axis scheme is described below. The optical axis of thedarkfield illumination optical system 10 is inclined obliquely withrespect to the line normal to the surface of the wafer 1. The lightsource 11 can be a laser light source or lamp source (such as mercury,mercury xenon, or xenon lamp) that emits illumination light which has aplurality of wavelengths (luminous spectra) or a plurality of wavelengthbands. Since reduction in illumination wavelength increases the amountof light scattered, UV (ultraviolet) light or DUV (deep ultraviolet)light would be usable. If a laser light source is to be used, this canbe a YAG solid-state laser with a second higher-harmonic wavelength of532 nm, a third higher-harmonic wavelength of 355 nm, a fourthhigher-harmonic wavelength of 266 nm, a KrF wavelength of 248 nm, an ArFwavelength of 193 nm, or for stronger laser light, 199 nm. It ispossible, as shown in FIG. 3, to provide a plurality of such laser lightsources, 12 a and 12 b, emit laser beams therefrom at the same time, andsynthesize the beams into multi-wavelength illumination light includinga plurality of wavelengths or wavelength bands, via a dichroic mirror13. If a lamp light source is to be used, this can be a mercury lamp ora mercury xenon lamp, in which case, multi-wavelength illumination lightthat includes wavelengths of 578 nm, 547 nm, 436 nm, 405 nm, and 365 nmcan be formed as luminous spectra. An alternative lamp light source canbe a xenon lamp, in which case, multi-wavelength illumination light withthe above luminous spectra superimposed on visible light of a wide bandcan be formed. As the illumination wavelength is reduced, a greateramount of light will be scattered from minute defects. For this reason,the kind of light applied would be, for example, light of an orange-blueband with a wavelength from about 450 nm to about 650 nm, or purple-bandUV (ultraviolet) light or DUV (deep ultraviolet) light with a wavelengthup to about 440 nm. An example of using a laser light source as thelight source 11 in the present embodiment is described below.Multi-wavelength laser light that has been emitted from the laser lightsource 11 is first refracted in the direction of an angle of incidenceby a non-spherical lens or non-spherical mirror (e.g., cylindrical lens)15 that is a shaping optical section. Next, the surface of the wafer 1is darkfield-irradiated with the refracted laser light in the form of alinear beam (slit-shaped beam) 16 obtained by shaping original parallelbeams of light within a plane orthogonal to the angle of incidence. Thelinear beam 16 that has been shaped by the shaping optics extends in aplanarly crossing direction with respect to the X-direction shown inFIG. 4. At this time, the stage 282 provided with the wafer 1 is movedto X-direction. This allows the wafer surface to be irradiated linearly(in slit beam form) in association with the rectangular fields of thefirst and second image sensors 200, 210, and multi-wavelengthillumination light of high illumination intensity to be irradiated asthe linear beam (slit-shaped beam) efficiently in association with theabove rectangular (slit-shaped) fields. Accordingly, a plurality oflower-output and less expensive laser light sources 12 a, 12 b can beused to satisfy the intensity required of the multi-wavelength linearbeam, and using these laser light sources 12 a, 12 b is advantageous forsuppressing apparatus costs. In addition, multi-wavelength illuminationmakes it possible to suppress changes in the amount of light (i.e.,changes in brightness) that arise from scattering from the circuitpatterns or defects on the wafer 1 due to subtle changes in thethickness of the transparent film (such as oxide film) formed on thewafer.

Next as shown in FIG. 4, a defect 4 or circuit pattern 3 isdarkfield-irradiated with the multi-wavelength linear beam 16 from atleast an oblique direction, and of all light that has been scattered ordiffracted on the surface of the wafer 1, only light that enters theapertures of the reflecting objective lens 22 disposed above the waferis captured (collected) by the achromatic reflecting objective lens 22.The captured light is branched into two optical paths, 21 a and 21 b, bythe beam splitter (branching optics) 24.

On the first detection optical path 21 a formed by the beam splitter 24,the first spatial filter 50 is disposed on a Fourier transform plane ofthe wafer image. The first spatial filter 50 can be of the periodicshielding type in which a periodic diffraction image (diffractionpattern) formed on the Fourier transform plane will be shieldedaccording to the periodicity of the circuit pattern formed on the wafer1. Alternatively, the first spatial filter 50 can be of the aperturednon-periodic type having a specific aperture shape, not a periodicpattern shape, as shown in FIG. 5B, 5C or 6A, 6B. The periodic shieldingspatial filter is constructed to render the optical shield changeable inpitch so that even if the diffraction image changes in pitch, thediffracted light can be shielded. A plurality of apertured non-periodicspatial filters are provided that each has a plurality of differentaperture shapes, as shown in FIG. 5B, 5C or 6A, 6B. The two types ofspatial filters are selectively usable via a spatial filter selector430. Light that has been passed through the spatial filter 50 can bechanged into a specific polarized state by further passing the lightthrough a first quarter-wavelength plate 30. This beam of light isfurther filtered by a first polarizer 35. The first quarter-wavelengthplate 30 and the first polarizer 35 are mounted in a polarizer selectionmechanism 400 that can be rotated and moved into and out from theoptical path. The light, after being passed through the first polarizers30, 35, is converged on the first image sensor 200 through a firstimaging lens 55 to form a darkfield image on the first image sensor 200.In addition, an imaging lens 57 different from the above imaging lens 55in focal distance is provided to change a magnification at which thedarkfield image will be projected in enlarged form on the first imagesensor 200. When the magnification change is conducted, the firstimaging lens having a focal distance appropriate for the selectedmagnification is positioned on the first detection optical path 21 a byan imaging lens selector 440. Furthermore, a two-dimensional imagesensor 65 a is disposed so that a two-dimensional image of the wafer 1can be detected under a stationary state thereof. The image sensor 65 ais mainly used for purposes such as creating an inspection recipe priorto inspection. When the image sensor 65 a is unnecessary, the inspectionapparatus retreats a beam splitter 60 a from the first detection opticalpath 21 a by operating a move-in/out mechanism 420 a.

Next, a method of discriminating the two detection optical paths, 21 aand 21 b, according to periodicity of circuit patterns 3 is describedbelow. A plan view of the circuit patterns 3 formed in a periodic wiring(memory cell) region 7 sectionalized as the memory block in each diearrayed on the wafer 1, and in a non-periodic wiring region 8sectionalized as the logic circuit block, is shown in FIG. 4A. In thismodel, each circuit pattern 3 is present on an oxide film, such as SiO₂,that is formed as an interlayer dielectric film. The circuit pattern 3is sectionalized into, for example, the periodic wiring (memory cell)region 7 and the non-periodic wiring region 8. This model also assumesthat a defect 4 is present on the oxide film. A sectional view ofsection A-A′ through the non-periodic circuit pattern region 8 is shownin FIG. 4B. On the wafer 1 is formed a transistor (not shown), on whichthe oxide film 2 is further formed, and on which film is formed ametallic wiring pattern 3 (e.g., tungsten, copper, aluminum, or thelike). The pattern 3 is wired so as to be orthogonal primarily toanother pattern, and parallel to an X- or Y-direction.

Next, image detection in the sectionalized periodic circuit patternregion 7 is described below. In the periodic circuit pattern region 7such as the memory block, an image signal is detected primarily on thefirst detection optical path 21 a shown in FIG. 2. The optical shield ofthe first spatial filter 50 assigned to the first detection optical path21 a is a periodic shielding type of linear spatial filter havingequally pitched shielding portions to shield the diffraction image ofthe circuit pattern.

Next, image detection in the sectionalized non-periodic circuit patternregion 8 is described below. Distribution diagrams of the lightscattered from the circuit pattern 3 and defect 4 in the non-periodiccircuit pattern region 8 (such as the logic circuit block) duringoblique illumination (darkfield illumination) of the wafer 1 are shownin FIGS. 5A to 5C.

FIG. 5A is a plan view of the Fourier transform plane in the darkfielddetection optical system 20, and a schematic distribution diagram of thelight scattered from the circuit pattern 3 and defect 4 in thenon-periodic circuit pattern region 8. A circle 310 denotes an actual NAof the reflecting objective lens 22, and the NA shown in the presentexample is 0.8. A center of this circle is an arrival position of thelight which propagates in parallel with respect to the normal line ofthe wafer surface. At this time, the wafer surface is obliquelyirradiated with illumination light 16 from a point 5 outside thereflecting objective lens 22, in the form of a slit-shaped beamextending planarly in an crossing direction with respect to anX-direction, and the 0th-order light that has regularly reflected on thesurface of the wafer 1 reaches a point 6 symmetrical with respect to acentral portion of the NA. In FIG. 5A showing the light scattered ordiffracted from the circuit pattern 3 in the non-periodic circuitpattern region 8, the light scattered or diffracted from the circuitpattern 3 in the circuit pattern region 8 parallel to a Y-direction is,as denoted by reference number 3 r, collected mainly on a plane ofincidence that is relatively parallel to the Y-direction (although thelight scattered from the pattern also propagates into other regions,description of this light is omitted herein). The amounts of lightscattered or diffracted from corners of the circuit pattern 3 and fromthe circuit pattern 3 parallel to the X-direction become relatively highat a peripheral region 3 s of the 0th-order diffracted light (regularlyreflected light) 6. A distribution 4 s of the light scattered from thedefect 4 indicates a model in which the light is collected mainly at aperipheral NA portion of forward scattering. To obtain a high-contrastdarkfield defect detection image advantageous for defect detection, itis ideal that only the light scattered from the defect 4 should bedetected by shielding the light scattered or diffracted from the normalcircuit pattern 3 in the non-periodic region. Accordingly, for suchscattered-beam distribution as in FIG. 5A, it is effective to dispose asecond spatial filter 95 having an aperture 96 in a region substantiallyfree from the light scattered from the normal circuit pattern 3 in thenon-periodic circuit pattern region, and exposed to a large amount oflight scattered from the defect. In the example of FIG. 5B, the regionexposed to a large amount of light scattered from the circuit pattern 3is shielded by an optical shield 95 a, and other regions are formedusing the aperture 96.

In the example of FIG. 5C, the aperture 96 is formed only in a regionsubstantially free from the light scattered from the normal circuitpattern 3 in the non-periodic circuit pattern region, and exposed to alarge amount of light scattered from the defect, and other regions areformed using an optical shield 95 b. Distributions of these beams oflight change according to not only the shape, direction, and dimensionsof the normal circuit pattern 3 in the non-periodic region, but also thekind, position, size, and other factors of defect. Accordingly, thesecond spatial filter 95 is desirably provided in a plurality of placesin the optical system so that an aperture shape of a spatial filteradvantageous for inspection can be selected from the spatial filtersprovided for different structures of wafers 1 to be inspected, fordifferent circuit patterns 3, and for different kinds of defects 4.

Next, a modification of a second spatial filter 95 is described belowusing FIG. 6. During darkfield illumination of a wafer 1 with polarizedlight (e.g., S-polarized light, P-polarized light, and clockwise orcounterclockwise circularly polarized light, orP-polarization/S-polarization mixed light with an optical pathdifference greater than a coherent distance), the light scattered fromthe circuit pattern 3 and the defect 4 also exhibits polarizationcharacteristics. These polarization characteristics may differ accordingto the particular scattering direction, and when this property isutilized, the light scattered from the circuit pattern 3 can beprocessed by polarized filtering, and thus a relatively large amount oflight scattered from the defect 4 can be detected. For these reasons,the spatial filter 95 d shown in FIG. 6A has, at one aperture 96 a, ahalf-wave film rotating a vibration plane of the polarized light, a filmcausing a phase difference of a quarter wavelength, or any other doublerefractor 97, and at another aperture 96 b, does not have aphase-difference film. After the light has been passed through such aspatial filter 95 a, only a specific polarized beam is passed throughvia a polarizer 85 to form a darkfield image. The contrast of the defectcan thus be further enhanced.

The spatial filter 95 e shown in FIG. 6B may not use a double refractor.Instead, the spatial filter 95 e may use a method of reducing theintensity of the light from the pattern by utilizing the phasedifference between the light passed through an aperture 96 c and thelight passed through an aperture 96 d. The spatial filter 95 e uses amaterial 98, instead of the above double refractor, at the aperture 96 cin order to provide the phase difference π.

Although an example of an apertured non-periodic spatial filter 95 ewith two apertures has been described above, if a larger number ofapertures are necessary, it is effective to dispose a double-refractoror a phase difference film (negligibly small in double-refractingperformance) considering a phase state and the differences in polarizingcharacteristics between the defect 4 and the circuit pattern 3 extendingthrough each aperture. It is also effective to combine adouble-refractor and a phase difference film.

Next, a selector 470 that selects any one of different multiple spatialfilters 95 a to 95 e is described below using FIG. 7. The selector 470is constructed so as to be able to select, for example, a linearmovement or rotary movement of a stage 450 having the multiple spatialfilters 95 a to 95 e arrayed thereon (only the filters 95 a to 95 c areshown in FIG. 7). The linear movement or rotary movement 550 of thestage 450 is selected in accordance with a control command from themechanism controller 280. That is to say, the selector 470 is adapted toselectively set an optimal (e.g., apertured) non-periodic spatial filteraccording to specifications of the wafer 1 to be inspected. As with thespatial filter selector 470, the spatial filter selector 430 is adaptedto selectively set an optimal periodic shielding spatial filter (e.g.,one with optical shields arrayed at spatial intervals) according to thespecifications of the wafer 1 to be inspected. The selection of theoptimal filter is based on a control command from the mechanismcontroller 280.

It is possible, as described above, to set the apertured non-periodictype of spatial filter as the first spatial filer 50.

As set forth above, according to the first embodiment of the presentinvention, the adoption of the reflecting objective lens 22 as anobjective lens makes it possible, during darkfield detection based ondarkfield illumination, to prevent chromatic aberration, to suppresschanges in brightness due to multi-wavelength illumination, to acquire aclear defect image signal from, for example, the first and second imagesensors 200, 210 each by selecting the appropriate wavelength, and tooptimize, by wavelength separation in the darkfield detection opticalsystem, the amount of light detected on the memory block and the logiccircuit block.

Defect discrimination by an image processor 230 a, based on mutuallydifferent kinds of images acquired by the image sensors 200 and 210 onthe two detection optical paths, 21 a and 21 b, is next described belowusing FIG. 8. The description given here relates to detecting images onthe first detection optical path 21 a and second detection optical path21 b described using FIG. 2, and to a process flow of the defectdiscrimination by the image sensor 230 a. Since resolution of thebrightness of the images detected by the first image sensor 200 and thesecond image sensor 210 is expressed in 1,024 grayscale levels, thegrayscale levels of the image signals detected by the image sensors 200,210 are converted into 256 grayscale levels when the images undergoprocessing by grayscale converters 231 a, 231 b. Linear or non-linearbrightness conversion characteristics can be selected when the grayscaleconversions are conducted.

The following describes a process flow relating to the image signal f1detected by the first image sensor 200, and that of the image signal f2detected by the second image sensor 210. That is to say, the detectedimage signal f1, f2 obtained by conducting a grayscale level conversioninto 256 grayscale levels of brightness information is sent to both animage position-matching section 233 a, 233 b and a delay memory 232 a,232 b. Before the detected image signal that has been sent to the delaymemory 232 a, 232 b is further sent to the image position-matchingsection 233 a, 233 b, a reference image signal g1, g2 is created with atime-lag equivalent to, for example, an arrayal pitch of the dies onwhich the same pattern is formed. This time-lag is provided for reasonsassociated with design. Accordingly, the real-time detected image signalf1, f2 and the reference image signal g1, g2 relating to an adjacentdie, for example, are sent to the image position-matching section 233 a,233 b, in which the two image signals are then matched in position and adifferential image obtained by position matching of the two imagesignals is calculated by a differential image calculating section 234 a,234 b. The calculated differential image next undergoes two systems ofthreshold level processing. A first comparator 235 a, 235 b uses apreviously set constant threshold level 236 a, 236 b to conduct a firstthreshold level discrimination against an absolute value of thedifferential image obtained from the differential image calculatingsection 234 a, 234 b, and image feature quantities (brightness, size,and other information) in the region of defect candidates exceeding thethreshold level are sent to a defect discriminator 240 a, 240 b. Also, asecond threshold level processor (integrator) 239 a, 239 b derivesinformation, such as variations in internal brightness of the memoryregion, from a plurality of differential images detected, for example,in the memory region and the logic circuit region, and then generates asecond threshold level 238 a, 238 b based on the variations. The secondcomparator 237 a, 237 b conducts a second threshold level discriminationusing the second threshold level 238 a, 238 b generated above for theabsolute value of the above differential image. The second thresholdlevel becomes a floating threshold level. As with the first thresholdlevel, image feature quantities in the region of defect candidatesexceeding the floating threshold level are sent to the defectdiscriminator 240 a, 240 b. The image feature quantities that have beensent from the two systems are next used for the defect discriminators240 a, 240 b to conduct synthetic defect discriminations, for example,in the memory block region and the logic circuit block region. At thistime, since significant nonuniformity in brightness tends to exist for aspecific pattern, a normal section may be mis-discriminated as adefective. By utilizing the fact that the mis-discrimination easilyoccurs with a specific pattern, the inspection apparatus assignscoordinate information 241 a, 241 b of the wafer to the defectdiscriminator 240 a, 240 b, and sets up a flag to indicate that for theregion in which the mis-discrimination is prone to occur, even if theabove first or second threshold level is exceeded, the correspondingsection will be excluded from the defect discrimination or thediscrimination itself is most likely to result in an error. After thesetup of the flag, the coordinate information is sent to a defectfeature quantity computing section 242 a, 242 b. The defect featurequantity computing section 242 a, 242 b uses detected images tocalculate the feature quantities of defective sections even more closelythan for the image feature quantities that have been sent to thecomparator set 235 a, 237 a or 235 b, 237 b.

As set forth above, image processing is conducted upon the image signalsf1, f2 that have been detected by the first and second image sensors200, 210, image feature quantities of defective sections, for example,in the memory block region, and feature quantities of defectivesections, for example, in the logic circuit block region, arecalculated, and calculation results are input to a defect classifier243.

The defect classifier 243 classifies defects according to, for example,the image feature quantities of internal defective sections of thememory block, obtained from the defect feature computing section 242 aon the basis of the defect image signal detected by the first imagesensor 200. The defect classifier 243 also classifies defects accordingto, for example, the image feature quantities of internal defectivesections of the logic circuit block, obtained from the defect featurecomputing section 242 b on the basis of the defect image signal detectedby the second image sensor 210. The defect classification results,coordinate information, image feature quantities, and other informationthat have been obtained by the defect classifier 243 are output to adisplay device (or the like) provided at the operating unit 290. Theoperator can visually confirm the output information, and the outputinformation is further sent to a host system (not shown) that isundertaking LSI-manufacturing process control.

Next, an example of smaller-scale image processing is described belowusing FIG. 9. More specifically, a process flow of acquiring an image ofthe memory block on the first detection optical path 21 a describedusing FIG. 2, and detecting an image of the logic circuit block on thesecond detection optical path 21 b, is described below. The first imagesensor 200 and the second image sensor 210 detect images, regardless ofthe memory/logic region. For example, the resolution of the brightnessof each detected image is expressed in 1,024 grayscale levels, and whenthe image is processed, the original grayscale level is converted intoone of 256 grayscale levels. Linear or non-linear brightness conversioncharacteristics can be selected when the grayscale conversion isconducted. The grayscale converters 231 a and 231 b each conduct thegrayscale conversion for each image signal and sends conversion resultsto an image selector 244. The image selector 244 receives the coordinateinformation 245 input from the stage 282, and can judge whether theinput image relates to the memory block that is the periodic patternblock, or the logic circuit block that is the non-periodic patternblock. If the supplied image information relates to the memory block,the image selector selects the image signal detected by the first imagesensor 200, or if the supplied image information relates to the logiccircuit block, the image selector selects the image signal detected bythe second image sensor 210. The image signal f1, f2 that has thus beenselected is sent to both the image position-matching section 233 and thedelay memory 232. The image that has been sent to the delay memory 232is further sent to the image position-matching section 233, with atime-lag equivalent to, for example, the arrayal pitch of the dies onwhich the same pattern is formed. This time-lag is provided for reasonsassociated with design. Accordingly, the real-time detected image signalf1, f2 and a reference image signal g1, g2 relating to an adjacent die,for example, are sent to the image position-matching section 234, inwhich the two image signals are then matched in position and adifferential image obtained by position matching of the two imagesignals is calculated by a differential image calculating section 234.The calculated differential image next undergoes two systems ofthreshold level processing in a first comparator 235 and a secondcomparator 237. The first comparator 235 uses a constant threshold levelto conduct a first threshold level discrimination against, for example,absolute values of the memory block and logic circuit block differentialimages obtained from the differential image calculating section 234, andimage feature quantities (brightness, size, and other information) inthe region exceeding the threshold level are sent to a defectdiscriminator 240. Also, a second threshold level processor (integrator)239 derives information, such as variations in brightness, from thedifferential images obtained from the differential image calculatingsection 234 after being detected, for example, in the memory region andthe logic circuit region, and then generates a second threshold level238 based on the derived image information such as the variations inbrightness. The second comparator 237 compares the differential imagesobtained, for example, from the memory block and logic circuit blockregions after processing in the differential image calculating sections234, and the generated second threshold levels 238 relating to thememory block and logic circuit block regions. Each second thresholdlevel 238 becomes a floating threshold level. As with the firstthreshold level, the image feature quantities in the region of thedefect candidates exceeding the floating threshold level are sent to thedefect discriminator 240. The image feature quantities that have beensent from the two systems are next used for the defect discriminator 240to conduct synthetic defect discriminations, for example, in the memoryblock region and the logic circuit block region. At this time, sincesignificant nonuniformity in brightness tends to exist for a specificpattern or other patterns, a normal section may be mis-discriminated asa defective. By utilizing the fact that the mis-discrimination easilyoccurs with a specific pattern 3, the inspection apparatus assignscoordinate information 241 of the wafer 1 to the defect discriminator240, and sets up a flag to indicate that for the region in which themis-discrimination is prone to occur, even if the above first or secondthreshold level is exceeded, the corresponding section will be excludedfrom the defect discrimination or the discrimination itself is mostlikely to result in an error. After the setup of the flag, thecoordinate information is sent to the defect feature quantity computingsection 242. The defect feature quantity computing section 242 usesdetected images to calculate the feature quantities of defectivesections even more closely than for the image feature quantities thathave been sent to the comparators 235, 237. The defect classifier 243uses the calculated feature quantities to classify the defects. Thedefect classification results, coordinate information, image featurequantities, and other information are output to the display device (orthe like) of the operating unit 290.

Next, optical parameters relating to the darkfield detection opticalsystem 20, that is, shield shapes of the spatial filters 50, 95, andsetup parameters for the polarizers 30, 35, 80, 85 need to haverespective appropriate parameter values selected according to theparticular structure of the wafer 1, the particular shape of the pattern3, the kind of defect 4 to be detected, and other factors. An inspectionrecipe also needs to be created using the operating unit 290.Functionality for creating this inspection recipe is described belowusing FIG. 10. As shown in FIG. 2, an image sensor 25 a, 25 b forobserving a Fourier transform image required for the optical parametersfor inspection, and a two-dimensional image sensor (two-dimensionalcamera) 65 a, 65 b for detecting a two-dimensional image of defects onthe wafer 1 under a stationary state of the stage 282 are disposed inthe darkfield detection optical system 20. Beam splitters 40 a, 40 b and60 a, 60 b are disposed on each detection optical path (21 a, 21 b) sothat light is distributed to both the Fourier transform plane observingimage sensor 25 a, 25 b and the image sensor 65 a, 65 b during recipecreation. The two-dimensional image sensor (two-dimensional camera) 65a, 65 b is disposed to reduce a time required for wafer scanning duringacquisition of a two-dimensional image with the image sensor 200, 210.The two-dimensional image sensor 65 a, 65 b is also disposed to allow arecipe-creating person to easily select optical parameters bysimultaneously observing an image of the Fourier transform plane and animage of the wafer 1 in real time. The beam splitter 60 and thetwo-dimensional image sensor (two-dimensional camera) 65 do not need tobe provided on each detection optical path.

The image that the Fourier transform plane observing image sensor 25 a,25 b has acquired is passed through an image adder (integrator) 246, andafter another image has been added as necessary, both images are sent toa filter selector 247. The filter selector 247 selects a position of theFourier transform plane to be optically shielded, then sends thecoordinate data to the operating unit 290, and selects the spatialfilter 50, 95 so that the selected region is optically shielded. Also,the image that the two-dimensional camera 65 a, 65 b has acquired issent to a pattern image discriminator 248. Then the brightness, area,and other data of the pattern image are calculated from the detecteddarkfield image, and calculation results are sent to the operating unit290.

Next, a sequence for selecting an optical shield of the spatial filter50, 95 by use of the above system is set forth below using FIG. 11.First in step S121, the wafer 1 is positioned for matching between anillumination area and a circuit pattern to be subjected to parametersetup, and an aperture shape of a field stop 26 with an on-wafer fieldsize from 1 μm to 10 μm, shown in FIG. 2, is keyed to an imaging regionof the image sensor 25 b. Other optical parameters for illumination(namely, a selected wavelength band of the illumination light, theamount of illumination light, an elevation a of the linear beam 16, anillumination bearing, polarization of the illumination light, NA of theillumination light, and the like) are also assigned in step S121. Nextin step S122, the image sensor (TV camera) 25 a, 25 b acquires a Fouriertransform image. Next in step S123, periodicity discriminator (patternimage discriminator) 247 discriminates whether the spatial filteringparameter setup area is a periodic pattern block. If the area is aperiodic pattern block and the Fourier transform image lacks brightness,the amount of illumination light (e.g., a laser output level) to beapplied from the darkfield illumination optical system 10 is increasedor the brightness of the image is adjusted to an appropriate level byadding a plurality of images in the image adder (integrator) 245. Instep S124, the image that has thus been enhanced in brightness is sentto the filter selector 246, a region of a diffraction image iscalculated, and parameters relating to operating equally pitched linearspatial filters for optically shielding the region of the diffractionimage are determined by calculation. In step S125, the thus-obtainedinformation is sent to the operating unit 290 and the first spatialfilter 50 is set via the mechanism controller 280. In order to judgeadequacy of these setting results, the TV camera 25 a confirms in stepS126 that the diffraction image of the periodic circuit pattern isoptically shielded. Additionally in step S126, TV camera 65 a acquiresthe wafer image and confirms that the brightness of the periodic circuitpattern is suppressed. Beam leakage from the diffraction image of theperiodic circuit pattern is calculated in step S127, and if, in stepS128, the calculated beam leakage level is judged not to be within anallowable range (i.e., the diffraction image is not fully shielded),process control is returned to step S124, in which step, parametersrelating to the equally pitched linear spatial filters are thendetermined and the old parameter data therefor is changed. That is tosay, this operation sequence is repeated until the optically shieldedstate of the diffraction image of the periodic circuit pattern hasfallen within the allowable range in step S128.

Next, a setting sequence relating to the apertured non-periodic spatialfilter and other optical elements set if, in step S123, the spatialfilter parameter setup area is judged to be a non-periodic circuitpattern by the periodicity discriminator (pattern image discriminator)247, is set forth below. Basically, the apertured non-periodic spatialfilter and other optical elements are set using the same sequence asthat of the periodic circuit pattern. The non-periodic circuit patternis dissimilar to the periodic circuit pattern in that orientation of theformer differs according to position on the wafer. It is desirable,therefore, that a total diffraction image of the non-periodic patternblock be acquired and that the shape of the aperture 96 of the secondspatial filter 95 be determined from that image. In order to conductthese, in step S130, the wafer is moved stepwise to a position at whichthe orientation of the circuit pattern differs, then in step S131,Fourier transform images are acquired using the beam splitter 40 b,imaging lens 27 b, and TV camera 25 b provided on the second detectionoptical path 21 b, and in step S129, the acquired images are added inthe image adder (integrator) 246. This sequence is repeated until imageacquisition in a previously designated image acquisition region hasended. Brightness of the image obtained by the addition is givenprimarily by the light scattered from the circuit pattern. A regionbrighter than the obtained image is selected (optical shield data of aspatial filter is calculated) in step S132. In step S133, an aperturednon-periodic spatial filter of an appropriate shield shape is selectedfrom the apertured non-periodic spatial filters provided beforehand foroptically shielding the above-selected region, and the selected spatialfilter is set. In order to judge adequacy of these filter selectionresults, the TV camera 25 b confirms in step S134 that the non-periodicscattered-beam image 3 r, 3 s shown in FIG. 5A is optically shielded.Additionally in step S134, the TV camera 65 a acquires the wafer imageand confirms that the brightness of the non-periodic scattered-beamimage is suppressed. Beam leakage from the non-periodic scattered-beamimage is calculated in step S135, and if, in step S136, the calculatedbeam leakage level is judged not to be within an allowable range (i.e.,the diffraction image is not shielded), process control is returned tostep S132, in which step, parameters relating to the aperturednon-periodic spatial filters 95 are then determined and the oldparameter data therefor is changed. That is to say, this operationsequence is repeated until the optically shielded state of thescattered-beam image of the non-periodic circuit pattern has fallenwithin the allowable range in step S136. Thus, setting of the spatialfilters 50, 95 is completed in step S137.

Next, a method for optimizing various optical parameters to detect aspecific defect highly critical to a device is described below usingFIGS. 12 and 13. FIG. 12 shows a plan view of the wafer 1. Defect 4 is adefect to be detected in a non-periodic pattern region. To optimize aspatial filter, it is necessary to understand a scattered-beamdistribution of the defect. Illumination light is emitted in a widerange, so to detect the scattered-beam distribution of the defect 4only, an aperture shape needs to be set only in neighborhood of thedefective region by use of the field stop 26 disposed in the darkfielddetection optical system 20 of FIG. 2. A size of this aperture changesaccording to that of the defect and a positional relationship withrespect to a peripheral pattern. The field stop 26 has an appropriateon-wafer aperture size of about 1 to 10 μm per side for an LSI pattern(this on-wafer aperture size corresponds to an outside diameter of acircular aperture). A distribution of the scattered light detected bythe Fourier transform image observing camera 25 b via the field stop 26of the darkfield detection optical system 20 is a distribution of thelight scattered mainly from the defect, so setting the aperturednon-periodic spatial filter 95 at a position high in luminance of thescattered light makes it possible to detect the light scattered from thedefect, and suppress the light scattered from normal non-periodicpatterns.

Next, a sequence relating to optimizing optical parameters for a defectthat is to be detected is described below using FIG. 13. In step S141,optical parameters to be first used for trial are selected using the GUIof the operating unit 290. Next in step S142, the aperture shape of thefield stop 26 in the darkfield detection optical system 20 is set in theneighborhood of the defect on the basis of the screen shown in FIG. 12.Next in step S143, fixed optical parameters (a wavelength band of theillumination light, the amount of illumination light, an imagingmagnification of the imaging lens set 55, 57 or 100, 110, and otherparameters) are set using the GUI of the operating unit 290. Next,optical parameters to be tried are set in step S144.

Roughly two sets of parameters are usable for trial. One set relates tothe darkfield illumination optical system 10, and this set includes, forexample, the elevation a of the illumination light (slit-shaped beam) 16(i.e., the angle of the optical axis of the illumination light 16 fromthe wafer surface), an angle with respect to a reference illuminationbearing (e.g., a notch direction of the wafer) or an angle with respectto a traveling direction (when used as a reference direction) of theX-stage 282 of the apparatus, polarization of the illumination light,and the NA of the illumination light. The other parameter set relates tothe darkfield detection optical system 20 and includes, for example,rotational angles of the quarter-wavelength plate 30, 80 and polarizer35, 85, and the aperture shape and double-refractor of the spatialfilter 95 (the parameters relating to this spatial filter are selectedafter the determination of the above parameters).

These parameters are assigned and optimization is executed using thefollowing loop.

In step S145, the camera 25 b, 65 b acquires a darkfield image andFourier transform image of a defective region, and in step S146, thewafer is moved to an adjacent die. On this die, the camera 25 b, 65 balso acquires a darkfield image and Fourier transform image of a normalregion in step S147. Next in step S148, the image processor 230calculates a differential image from the darkfield image and Fouriertransform image of the adjacent die. In step S149, it is judged whethertrial parameter data execution with the operating unit 290 has beencompleted. If the execution is not completed, process control isreturned to step S144 and then steps up to S148 are repeated. Next instep S150, the image processor 230 compares the scattered-beamdistribution of the defective region and that of the normal region basedon the differential image of the Fourier transform images associatedwith the executed trial parameters, and calculates a region different inthe distribution. At this time, the region different between thedefective and normal regions in terms of the scattered-beam distributionis discriminated by utilizing, for example, the differential image ofthe Fourier transform images. The region different in the scattered-beamdistribution is, for example, the region where the light scattered fromthe defective section is relatively strong when compared with the lightscattered from the normal section, or the region where the lightscattered from the defective section is present in a region free fromthe light scattered from the normal section. Thus, an optical parameterthat allows efficient detection of a larger amount of light scatteredfrom the defect is confirmed and selected in step S151. The number ofparameters selected in this step may be two or more, not one. The imageprocessor 230 can thus confirm the optical parameter that allows thedetection of a larger amount of light scattered, and a position on theFourier transform plane where the light scattered occurs. Next in stepS152, the image processor 230 selects the apertured non-periodic type ofspatial filter 95 apertured at the position on the Fourier transformplane where the light scattered occurs, and supplies the information tothe operating unit 290. This completes the selection of the appropriateoptical parameter for the apertured non-periodic type of spatial filter,pursuant to the control of the mechanism controller 280 that is based ona control command from the operating unit 290. If the number of selectedparameters is plural, test inspection with the selected parameters isconducted and then an appropriate parameter that allows higherperformance to be obtained during the detection of defects and thediscrimination of normal patterns is selected according to testinspection results. Thus, optical parameter setup is completed in stepS153.

While various combinations are possible for the above-describedconfiguration, functionality, and parameterization, it is obvious thatthe combinations also stay within the scope of the present invention.

Of all the aspects of the present invention that have been disclosed inthe above examples, some of typical aspects are summarized below.

(1) A defect inspection apparatus includes:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and wavelengthseparation optics for conducting wavelength separation of the scatteredlight that has been converged by the reflecting objective lens, andafter the wavelength separation, branching the scattered light into atleast a first detection optical path and a second detection opticalpath, the darkfield detection optical system further having, on thefirst detection optical path, a first spatial filter for opticallyshielding, of all the first scattered light having the wavelength bandwhich has been selected by the wavelength separation optics, only adiffraction image arising from a periodic circuit pattern formed on thesurface of the sample, and first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight that has been passed through the first spatial filter, and thedarkfield detection optical system further having, on the seconddetection optical path, a second spatial filter for optically shielding,of all the second scattered light having the wavelength band which hasbeen selected by the wavelength separation optics, only a region high inan intensity distribution of the scattered light arising from anon-periodic circuit pattern formed on the surface of the sample, andsecond imaging optics for imaging onto a light-receiving surface of asecond image sensor the second scattered light that has been passedthrough the second spatial filter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

(2) Another defect inspection apparatus includes:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first wavelengthselection filter for selecting a first wavelength band from adistribution of the scattered light which has been branched by thebranching optics, and first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight having the first wavelength band which has been selected by thefirst wavelength selection filter, and the darkfield detection opticalsystem further having, on the second detection optical path, a secondwavelength selection filter for selecting a second wavelength band fromthe distribution of the scattered light which has been branched by thebranching optics, and second imaging optics for imaging onto alight-receiving surface of a second image sensor the second scatteredlight having the second wavelength band which has been selected by thesecond wavelength selection filter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

(3) Yet another defect inspection apparatus includes:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first wavelengthselection filter for selecting a first wavelength band from adistribution of the scattered light which has been branched by thebranching optics, a first spatial filter for optically shielding, of allthe first scattered light having the first wavelength band which hasbeen selected by the first wavelength selection filter, only adiffraction image arising from a periodic circuit pattern formed on thesurface of the sample, and first imaging optics for imaging onto alight-receiving surface of a first image sensor the first scatteredlight which has been passed through the first spatial filter, and thedarkfield detection optical system further having, on the seconddetection optical path, a second wavelength selection filter forselecting a second wavelength band from the distribution of thescattered light which has been branched by the branching optics, asecond spatial filter for optically shielding, of all the secondscattered light having the second wavelength band which has beenselected by the second wavelength selection filter, only a region highin an intensity distribution of the scattered light arising from anon-periodic circuit pattern formed on the surface of the sample, andsecond imaging optics for imaging onto a light-receiving surface of asecond image sensor the second scattered light which has been passedthrough the second spatial filter; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

(4) The darkfield detection optical system of the defect inspectionapparatus described in above item (2) further has a first polarizingfilter on the first detection optical path and a second polarizingfilter on the second detection optical path.

(5) The darkfield detection optical system of the defect inspectionapparatus described in above item (2) further has an ND filter to reducethe light in intensity, on the first detection optical path or thesecond detection optical path.

(6) The image processor of the defect inspection apparatus described inabove item (2) selects the first image signal or the second imagesignal, depending upon at least whether the circuit pattern of interest,formed on the surface of the sample, has periodicity, and thendiscriminates the defects or the defect candidates.

(7) A further defect inspection apparatus includes:

a darkfield illumination optical system that conducts darkfieldillumination upon the surface of a sample with irradiation light havinga plurality of wavelength bands;

a darkfield detection optical system that includes a reflectingobjective lens for converging the light scattered from the surface ofthe sample that has been darkfield-illuminated with the irradiationlight having the plurality of wavelength bands, and branching optics forbranching the scattered light that the reflecting objective lens hasconverged, into at least a first detection optical path and a seconddetection optical path, the foregoing darkfield detection optical systemfurther having, on the first detection optical path, a first spatialfilter for optically shielding the light diffracted from a periodiccircuit pattern formed on the surface of the sample, and first imagingoptics for imaging onto a light-receiving surface of a first imagesensor the first scattered light which has been passed through the firstspatial filter, and the darkfield detection optical system furtherhaving, on the second detection optical path, a second spatial filterfor optically shielding a region high in an intensity distribution ofthe scattered light arising from a non-periodic circuit pattern formedon the surface of the sample, second imaging optics for imaging onto alight-receiving surface of a second image sensor the second scatteredlight which has been passed through the second spatial filter, and an NDfilter for reducing the light in intensity on the first detectionoptical path or on the second detection optical path; and

an image processor which, in accordance with a first image signalobtained from the first image sensor of the darkfield detection opticalsystem, or/and a second image signal obtained from the second imagesensor, discriminates defects or defect candidates present on thesurface of the sample.

(8) The darkfield detection optical system of the defect inspectionapparatus described in above item (7) further has a first polarizer onthe first detection optical path and a second polarizer on the seconddetection optical path.

(9) The light-receiving surfaces of the first and second image sensorsin the darkfield detection optical system of the defect inspectionapparatus described in above item (7) are each formed into a rectangularshape, and the irradiation light in the darkfield illumination opticalsystem is a slit-shaped beam keyed to the rectangular field shape of thelight-receiving surfaces.

(10) The image processor of the defect inspection apparatus described inabove item (7) selects the first image signal or the second imagesignal, depending upon at least whether the circuit pattern of interest,formed on the surface of the sample, has periodicity, and thendiscriminates the defects or the defect candidates.

(11) The reflecting objective lens in the defect inspection apparatusdescribed in above item (7) has an NA of 0.6 or more.

(12) A further defect inspection apparatus includes:

a darkfield illumination optical system which, after rectangularlyshaping an illumination beam of light, conducts darkfield illuminationupon the surface of a sample from an oblique direction;

a darkfield detection optical system adapted to

include an objective lens for converging the light scattered from thesurface of the sample that has been darkfield-illuminated by thedarkfield illumination optical system, and branching optics forbranching the converged light into a first detection optical path and asecond detection optical path,

have, on the first detection optical path formed by the branchingoptics, a first spatial filter and a first polarizer, either or both ofwhich are controlled in terms of setting state such that characteristicsof the scattered light passed through will differ from each other, afirst imaging lens for imaging the scattered light which has been passedthrough the first spatial filter and the first polarizer, and a firstimage sensor for receiving the scattered-light image which has beenformed via the first imaging lens,

have, on the second detection optical path formed by the branchingoptics, a second spatial filter and a second polarizer, either or bothof which are controlled in terms of setting state such that thecharacteristics of the scattered light passed through will differ fromeach other, a second imaging lens for imaging the scattered light whichhas been passed through the second spatial filter and the secondpolarizer, and a second image sensor for receiving the scattered-lightimage which has been formed via the second imaging lens, and

have, on at least either of the first and second detection opticalpaths, an ND filter for reducing the light in intensity;

a focusing unit for setting a focal position of the darkfield detectionoptical system to the surface of the sample; and

an image processor which, in accordance with an image signal obtainedfrom the first image sensor on the first detection optical path of thedarkfield detection optical system or from the second image sensor onthe second detection optical path of the darkfield detection opticalsystem, discriminates defects or defect candidates present on thesurface of the sample.

As described above, according to the present invention, defects presenton a mixed-type wafer (such as system LSI) or the like, inclusive of amemory block with a periodic circuit pattern formed thereon, and of alogic circuit block with an irregular (non-periodic) circuit patternformed thereon, can be detected with high sensitivity. Also, a widevariety of defect species can be detected and a defect detection ratioimproved.

In addition, the reflecting objective lens in the present invention hasan NA (Numerical Aperture) equal to or greater than 0.6, but less than1.0.

Furthermore, during darkfield detection based on darkfield illumination,the amount of light detected on a periodic circuit pattern and anon-periodic circuit pattern can be maintained at an appropriate level,irrespective of whether the circuit pattern of interest, formed on thewafer, has periodicity. Moreover, inspection sensitivity can be enhancedfor both the periodic circuit pattern and the non-periodic circuitpattern.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The presentembodiment is therefore to be considered in all respects as illustrativeand not restrictive, the scope of the invention being indicated by theappended claims, rather than by the foregoing description, and allchanges that come within the meaning and range of equivalency of theclaims are therefore intended to be embraced therein.

1. A defect inspection apparatus comprising: an illumination opticalsystem which conducts illumination upon the surface of a sample withirradiation light; a detection optical system which includes areflecting objective lens for converging light scattered from thesurface of the sample that has been illuminated by the illuminationoptical system, and wavelength separation optics for conductingwavelength separation of the scattered light that has been converged bythe reflecting objective lens, and after the wavelength separation,branching the scattered light into at least a first detection opticalpath and a second detection optical path, wherein the detection opticalsystem further includes, on the first detection optical path, a firstoptics for collecting onto a light-receiving surface of a first sensorthe first scattered light having a wavelength band which has beenselected by the wavelength separation optics, and wherein the detectionoptical system further includes, on the second detection optical path,second optics for collecting onto a light-receiving surface of a secondsensor the second scattered light having a wavelength band which hasbeen selected by the wavelength separation optics; and a signalprocessor which, in accordance with at least one of a first signalobtained from the first sensor of the detection optical system and asecond signal obtained from the second sensor, discriminates defects ordefect candidates present on the surface of the sample.
 2. The defectinspection apparatus according to claim 1, wherein: the detectionoptical system further includes a first polarizing filter disposed onthe first detection optical path, and a second polarizing filterdisposed on the second detection optical path.
 3. The defect inspectionapparatus according to claim 1, wherein: the detection optical systemfurther includes an ND filter disposed on at least one of the firstdetection optical path and the second detection optical path in order toreduce the light in intensity.
 4. The defect inspection apparatusaccording to claim 1, wherein: the signal processor selects at least oneof the first signal and the second signal, depending upon at leastwhether the circuit pattern of interest, formed on the surface of thesample, has periodicity, and then discriminates the defects or thedefect candidates.
 5. The defect inspection apparatus according to claim1, wherein: the light-receiving surfaces of the first sensor and secondsensor in the detection optical system are each formed into arectangular shape, and; the irradiation light in the illuminationoptical system is a slit-shaped beam keyed to the rectangular fieldshape of the light-receiving surfaces.
 6. The defect inspectionapparatus according to claim 1, wherein: the detection optical systemfurther includes a focusing mechanism to set a focal position of thedetection optical system to the surface of the sample.
 7. A defectinspection apparatus comprising: an illumination optical system which,after rectangularly shaping irradiation light, irradiates the surface ofa sample from an oblique direction; a detection optical system whichincludes a reflecting objective lens for converging light scattered fromthe surface of the sample that has been illuminated by the illuminationoptical system, and branching optics for branching scattered light thathas been converged by the reflecting objective lens, into at least afirst detection optical path and a second detection optical path,wherein the detection optical system is adapted to cause at least one ofa spatial filter and a polarizer to differ in setting state between thefirst detection optical path and the second detection optical path sothat the scattered beams of light, obtained on the detection opticalpaths, will differ from each other in characteristics; wherein thedetection optical system further includes, on the first detectionoptical path, a first spatial filter and a first polarizer, on thesecond detection optical path, a second spatial filter and a secondpolarizer, and on at least either of the first and second detectionoptical paths, an ND filter; and wherein the detection optical systemfurther includes, on the first detection optical path, first optics forcollecting onto a light-receiving surface of a first sensor the firstscattered light obtained after being passed through the first spatialfilter and the first polarizer, and on the second detection opticalpath, second optics for collecting onto a light-receiving surface of asecond sensor the second scattered light obtained after being passedthrough the second spatial filter and the second polarizer; and a signalprocessor which, in accordance with at least one of a first signalobtained from the first sensor of the detection optical system and asecond signal obtained from the second sensor, discriminates defects ordefect candidates present on the surface of the sample.
 8. The defectinspection apparatus according to claim 7, wherein: the light-receivingsurfaces of the first sensor and second sensor in the detection opticalsystem are each formed into a rectangular shape, and; the detectionoptical system further includes at least one of a non-spherical lens anda non-spherical mirror that shapes the irradiation light into aslit-shaped beam keyed to the rectangular field shape of thelight-receiving surfaces.
 9. The defect inspection apparatus accordingto claim 7, wherein: in the detection optical system, a field stop thatpermits the scattered light in a field size range from 1 μm to 10 μm onthe sample to pass through is disposed at least one of on the firstdetection optical path and on the second detection optical path, the atleast one of the first spatial filter and the second spatial filter isdisposed at a position of an image surface side of the field stop fromthe field stop, a Fourier transform plane is formed at a position of animage surface side of the at least one of the first spatial filter andthe second spatial filter, and an image sensor is disposed at theposition of the formed Fourier transform plane.
 10. The defectinspection apparatus according to claim 7, wherein the first polarizerand the second polarizer each includes a quarter-wavelength plate. 11.The defect inspection apparatus according to claim 7, wherein the secondspatial filter is formed into a type including a plurality ofnon-periodic apertures and has a double-refracting material in a part ofthe plural apertures.